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GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO
              <sub/>2</sub>
              Gate Insulator on AlGaN/GaN Heterostructure

GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO 2 Gate Insulator on AlGaN/GaN Heterostructure

Ao, Jin-Ping; Nakatani, Katsutoshi; Ohmuro, Keisuke; Sugimoto, Masahiro; Hu, Cheng-Yu; Sogawa, Yuji; Ohno, Yasuo
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Ao, Jin-Ping; Nakatani, Katsutoshi; Ohmuro, Keisuke; Sugimoto, Masahiro; Hu, Cheng-Yu; Sogawa, Yuji; Ohno, Yasuo
  • 卷第49卷
  • 期第4期
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小271.96KB
  • 发表时间2010-4-20
  • DOI10.1143/JJAP.49.04DF09
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