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Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques

Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques

Fahrettin Yakuphanoglu; Salih Okur
  • 作者Fahrettin Yakuphanoglu; Salih Okur
  • 卷第87卷
  • 期第1期
  • 印刷ISSN0167-9317
  • 文件大小1878.87KB
  • 发表时间2010
  • DOI10.1016/j.mee.2009.05.012
  • 页码30-34
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