Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach
Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi
- 期刊名称Japanese Journal of Applied Physics
- 作者Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi
- 卷第49卷
- 期第4期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小3399.16KB
- 发表时间2010-4-5
- DOI10.1143/jjap.49.040209