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Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi
  • 卷第49卷
  • 期第4期
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小3399.16KB
  • 发表时间2010-4-5
  • DOI10.1143/jjap.49.040209
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