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Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n
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-Source

Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n ⁺ -Source

Kanazawa, Toru; Wakabayashi, Kazuya; Saito, Hisashi; Terao, Ryousuke; Ikeda, Shunsuke; Miyamoto, Yasuyuki; Furuya, Kazuhito

期刊名称Applied Physics Express
作者Kanazawa, Toru; Wakabayashi, Kazuya; Saito, Hisashi; Terao, Ryousuke; Ikeda, Shunsuke; Miyamoto, Yasuyuki; Furuya, Kazuhito
卷第3卷
期第9期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小2040.60KB
发表时间2010-8-27
DOI10.1143/apex.3.094201

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