Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP
- 期刊名称Semiconductor Science and Technology
- 作者Haegel, Nancy M; Williams, Scott E; Frenzen, C L; Scandrett, Clyde
- 卷第25卷
- 期第5期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小615.56KB
- 发表时间2010-05-01
- DOI10.1088/0268-1242/25/5/055017
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