ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Amorphous Oxide Semiconductor Memory Using High-k Charge Trap Layer

• 作者Rha, Sang-Ho; Jung, Ji Sim; Kim, Jeong Hwan; Kim, Un Ki; Chung, Yoon Jang; Jung, Hyung-Suk; Lee, Sang-Yoon; Hwang, Cheol Seong
• 印刷ISSN1938-5862
• 文件大小814.31KB
• 发表时间2010
• DOI10.1149/1.3481260
• 页码375-380