Memory characteristics of Al2O3/LaAlO3/SiO2multilayer structures with tunnel oxide thickness variation
- 作者Seung-Yong Cha; Hyo-June Kim; Doo-Jin Choi
- 卷第45卷
- 期第19期
- 印刷ISSN0022-2461
- 电子ISSN1573-4803
- 文件大小440.20KB
- 发表时间2010-10
- DOI10.1007/s10853-010-4562-9
- 页码5223-5227