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The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

Stephen K. O’Leary; Brian E. Foutz; Michael S. Shur; Lester F. Eastman

作者Stephen K. O’Leary; Brian E. Foutz; Michael S. Shur; Lester F. Eastman
卷第21卷
期第3期
印刷ISSN0957-4522
电子ISSN1573-482X
文件大小884.17KB
发表时间2010-03
DOI10.1007/s10854-009-9896-1
页码218-230

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