Effect ofp-njunction overheating on degradation of silicon high-power pulsed IMPATT diodes

A. E. Belyaev; V. V. Basanets; N. S. Boltovets; A. V. Zorenko; L. M. Kapitanchuk; V. P. Kladko; R. V. Konakova; N. V. Kolesnik; T. V. Korostinskaya; T. V. Kritskaya; Ya. Ya. Kudryk; A. V. Kuchuk; V. V. Milenin; A. B. Ataubaeva

作者A. E. Belyaev; V. V. Basanets; N. S. Boltovets; A. V. Zorenko; L. M. Kapitanchuk; V. P. Kladko; R. V. Konakova; N. V. Kolesnik; T. V. Korostinskaya; T. V. Kritskaya; Ya. Ya. Kudryk; A. V. Kuchuk; V. V. Milenin; A. B. Ataubaeva
卷第45卷
期第2期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小926.69KB
发表时间2011-02
DOI10.1134/s1063782611020047
页码253-259

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Effect ofp-njunction overheating on degradation of silicon high-power pulsed IMPATT diodes