Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
- 作者G. Dingemans; M. C. M. van de Sanden; W. M. M. Kessels
- 卷第5卷
- 期第1期
- 印刷ISSN1862-6254
- 电子ISSN1862-6270
- 文件大小219.02KB
- 发表时间2011
- DOI10.1002/pssr.201004378
- 页码22-24
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