A new nanoscale and high temperature field effect transistor: Bi level FinFET
- 作者Mahsa Mehrad; Ali A. Orouji
- 卷第44卷
- 期第3期
- 印刷ISSN1386-9477
- 文件大小434.25KB
- 发表时间2011
- DOI10.1016/j.physe.2011.10.020
- 页码654-658
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