![[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - High capacitance density (< 17 fF/μm/sup 2/) Nb/sub 2/O/sub 5/-based mim capacitors for future RF IC applications]()
[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - High capacitance density (< 17 fF/μm/sup 2/) Nb/sub 2/O/sub 5/-based mim capacitors for future RF IC applicationsSun-Jung Kim, ; Byung Jin Cho, ; Yu, M.B.; Li, M.-F.; Xiong, Y.-Z.; Zhu, C.; Chin, A.; Kwong, D.-L. · 2005