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[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Effects of inserting ultrathin TaO<inf>x</inf> layer in Pt/TiO<inf>2</inf> interface on resistive switching characteristics

[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

Wei, Guobin; Murakami, Hideki; Fujioka, Tomohiro; Ohta, Akio; Goto, Yuta; Higashi, Seiichiro; Miyazaki, Seiichi
  • 作者Wei, Guobin; Murakami, Hideki; Fujioka, Tomohiro; Ohta, Akio; Goto, Yuta; Higashi, Seiichiro; Miyazaki, Seiichi
  • 文件大小233.70KB
  • 发表时间2011
  • DOI10.1109/IMFEDK.2011.5944869
  • 页码110-111
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