发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - First principle study of the stability of H atoms in SiN layers on MONOS-type memories during program/erase operations

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - First principle study of the stability of H atoms in SiN layers on MONOS-type memories during program/erase operations

Yamaguchi, Keita; Otake, Akira; Kamiya, Katsumasa; Shiraishi, Kenji; Shigeta, Yasuteru
  • 作者Yamaguchi, Keita; Otake, Akira; Kamiya, Katsumasa; Shiraishi, Kenji; Shigeta, Yasuteru
  • 文件大小4155.17KB
  • 发表时间2011
  • DOI10.1109/sispad.2011.6034917
  • 页码215-218
← 返回【学霸图书馆】主页