Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs

• 作者Saeed Mohammadi; Ali Afzali-Kusha; Saeed Mohammadi
• 卷第51卷
• 期第3期
• 印刷ISSN0026-2714
• 文件大小1371.56KB
• 发表时间2011
• DOI10.1016/j.microrel.2010.10.014
• 页码543-549