![Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH
<sub/>4</sub>
/CH
<sub/>4</sub>
/H
<sub/>2</sub>
at Various Substrate Temperatures]()
Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH
<sub/>4</sub>
/CH
<sub/>4</sub>
/H
<sub/>2</sub>
at Various Substrate TemperaturesTabata, Akimori; Komura, Yusuke; Hoshide, Yoshiki; Narita, Tomoki; Kondo, Akihiro · Japanese Journal of Applied Physics · 2008