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Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon

Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon

Ha, Sieu D.; Aydogdu, Gulgun H.; Viswanath, B.; Ramanathan, Shriram

期刊名称Journal of Applied Physics
作者Ha, Sieu D.; Aydogdu, Gulgun H.; Viswanath, B.; Ramanathan, Shriram
卷第110卷
期第2期
印刷ISSN0021-8979
文件大小827.55KB
发表时间2011
DOI10.1063/1.3610798

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