Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density

• 作者Chengzhao Chen; Linghong Liao; Cheng Li; Hongkai Lai; Songyan Chen
• 卷第257卷
• 期第7期
• 印刷ISSN0169-4332
• 文件大小670.60KB
• 发表时间2011
• DOI10.1016/j.apsusc.2010.10.068
• 页码2818-2821