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[IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE) - Wuhan, China (2011.04.15-2011.04.17)] 2011 International Conference on Electric Information and Control Engineering - A Si<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> phase change memory featuring 27F2 cell size and ultra low writing current

[IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE) - Wuhan, China (2011.04.15-2011.04.17)] 2011 International Conference on Electric Information and Control Engineering - A Si2Sb2Te5 phase change memory featuring 27F2 cell size and ultra low writing current

Chen Yifeng, ; Song, Zhitang; Chen Xiaogang, ; Liu, Bo

作者Chen Yifeng, ; Song, Zhitang; Chen Xiaogang, ; Liu, Bo
文件大小552.64KB
发表时间2011
DOI10.1109/iceice.2011.5778125
页码99-101

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