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The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Coleman, P. G.; Nash, D.; Edwardson, C. J.; Knights, A. P.; Gwilliam, R. M.
  • 期刊名称Journal of Applied Physics
  • 作者Coleman, P. G.; Nash, D.; Edwardson, C. J.; Knights, A. P.; Gwilliam, R. M.
  • 卷第110卷
  • 期第1期
  • 印刷ISSN0021-8979
  • 文件大小453.59KB
  • 发表时间2011
  • DOI10.1063/1.3605487
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