Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs

• 作者Thomas Benoist; Claire Fenouillet-Beranger; Pierre Perreau; Christel Buj; Philippe Galy; David Marin-Cudraz; Olivier Faynot; Sorin Cristoloveanu; Pierre Gentil
• 卷第88卷
• 期第7期
• 印刷ISSN0167-9317
• 文件大小602.15KB
• 发表时间2011
• DOI10.1016/j.mee.2011.03.112
• 页码1276-1279