Recovering behavior of JFET transistors after gamma ray irradiation
- 作者J. Assaf
- 卷第80卷
- 期第3期
- 印刷ISSN0969-806X
- 文件大小344.77KB
- 发表时间2011
- DOI10.1016/j.radphyschem.2010.09.016
- 页码491-495
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