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Study of potential high-
              <i>k</i>
              dielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

Study of potential high- k dielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

Darbandy, Ghader; Lime, François; Cerdeira, Antonio; Estrada, Magali; Garduño, Ivan; Iñiguez, Benjamin
  • 期刊名称Semiconductor Science and Technology
  • 作者Darbandy, Ghader; Lime, François; Cerdeira, Antonio; Estrada, Magali; Garduño, Ivan; Iñiguez, Benjamin
  • 卷第26卷
  • 期第11期
  • 印刷ISSN0268-1242
  • 电子ISSN1361-6641
  • 文件大小765.61KB
  • 发表时间2011-11-09
  • DOI10.1088/0268-1242/26/11/115002
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