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Properties of PEDOT:PEG/ZnO/p-Si heterojunction diodeMurat Soylu; Mihaela Girtan; Fahrettin Yakuphanoglu · 2012
Properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunctionSoylu, Murat; Yakuphanoglu, Fahrettin · Materials Chemistry and Physics · 2014
Photoelectrical characterization of a new generation diode having GaFeO3 interlayerSoylu, Murat; Cavas, M.; Al-Ghamdi, Ahmed A.; Gafer, Z.H.; El-Tantawy, F.; Yakuphanoglu, Fahrettin · Solar Energy Materials and Solar Cells · 2014
Fabrication and electrical characteristics of Perylene-3,4,9,10-tetracarboxylic dianhydride/p-GaAs diode structureMurat Soylu; Fahrettin Yakuphanoglu; I.S. Yahia · 2012
Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung modelMurat Soylu; Fahrettin Yakuphanoglu · 2010
Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayerMehmet Enver Aydın; Murat Soylu; Fahrettin Yakuphanoglu; W.A. Farooq · 2011
Modification of electrical properties of Al/p-Si Schottky barrier device based on 2ʹ-7ʹ-dichlorofluoresceinSoylu, Murat; Yahia, I. S.; Yakuphanoglu, Fahrettin; Farooq, W. A. · Journal of Applied Physics · 2011