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Investigation of resistive switching behaviours in WO
<sub/>3</sub>
-based RRAM devices

Investigation of resistive switching behaviours in WO ₃ -based RRAM devices

Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming

期刊名称Chinese Physics B
作者Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming
卷第20卷
期第1期
印刷ISSN1674-1056
文件大小561.31KB
发表时间2011-01
DOI10.1088/1674-1056/20/1/017305

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