A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

W. Chien; Y. Chen; F. Lee; Y. Lin; E. Lai; Y. Yao; J. Gong; S. Horng; C. Yeh; S. Tsai; C. Lee; Y. Huang; C. Chen; H. Kao; Y. Shih; K. Hsieh; C. Lu

作者W. Chien; Y. Chen; F. Lee; Y. Lin; E. Lai; Y. Yao; J. Gong; S. Horng; C. Yeh; S. Tsai; C. Lee; Y. Huang; C. Chen; H. Kao; Y. Shih; K. Hsieh; C. Lu
文件大小1422.59KB
发表时间2011
DOI10.1143/JJAP.50.04DD11

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