Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon

• 期刊名称Journal of Applied Physics
• 作者Viswanath, Changhyun Ko, B.; Yang, Zheng; Ramanathan, Shriram
• 卷第109卷
• 期第6期
• 印刷ISSN0021-8979
• 文件大小4389.54KB
• 发表时间2011
• DOI10.1063/1.3556756