Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric
- 期刊名称MATERIALS TRANSACTIONS
- 作者Chandra, S. V. Jagadeesh; Jeong, Myung-Il; Park, Yun-Chang; Yoon, Jong-Won; Choi, Chel-Jong
- 卷第52卷
- 期第1期
- 印刷ISSN1345-9678
- 电子ISSN1347-5320
- 文件大小2221.45KB
- 发表时间2011
- DOI10.2320/matertrans.m2010324
- 页码118-123
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