Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

• 作者Hongjun Wang; Changwei Zou; Lin Zhou; Canxin Tian; Dejun Fu
• 卷第91卷
• 印刷ISSN0167-9317
• 文件大小358.51KB
• 发表时间2012
• DOI10.1016/j.mee.2011.05.037
• 页码144-146