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Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

Ali A. Orouji; Mahsa Mehrad
  • 作者Ali A. Orouji; Mahsa Mehrad
  • 卷第51卷
  • 期第3期
  • 印刷ISSN0749-6036
  • 电子ISSN1096-3677
  • 文件大小609.56KB
  • 发表时间2012
  • DOI10.1016/j.spmi.2012.01.005
  • 页码412-420
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