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Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Yu.B. Bolkhovityanov; A.S. Deryabin; A.K. Gutakovskii; L.V. Sokolov
  • 作者Yu.B. Bolkhovityanov; A.S. Deryabin; A.K. Gutakovskii; L.V. Sokolov
  • 卷第338卷
  • 期第1期
  • 印刷ISSN0022-0248
  • 文件大小481.23KB
  • 发表时间2012
  • DOI10.1016/j.jcrysgro.2011.10.005
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