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The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition

The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition

Pitthan, E.; Palmieri, R.; Correa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.
  • 期刊名称ECS Solid State Letters
  • 作者Pitthan, E.; Palmieri, R.; Correa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.
  • 卷第2卷
  • 期第1期
  • 印刷ISSN2162-8742
  • 电子ISSN2162-8750
  • 文件大小576.42KB
  • 发表时间2012-11-06
  • DOI10.1149/2.008301ssl
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