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The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics

The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics

Kınacı, Barış; Şebnem Çetin, S.; Bengi, Aylin; Özçelik, Süleyman
  • 期刊名称Materials Science in Semiconductor Processing
  • 作者Kınacı, Barış; Şebnem Çetin, S.; Bengi, Aylin; Özçelik, Süleyman
  • 卷第15卷
  • 期第5期
  • 印刷ISSN1369-8001
  • 文件大小660.22KB
  • 发表时间2012-10
  • DOI10.1016/j.mssp.2012.04.002
  • 页码531-535
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