Electronic structure, Fermi surface, and chemical bonding in new layered oxyselenide: HgCuSeO
- 作者V. V. Bannikov, I. R. Shein, A. L. Ivanovskii
- 卷第53卷
- 期第4期
- 文件大小274.67KB
- 发表时间2012-07
- DOI10.1134/s0022476612040038
- 页码634-638
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