Origin of multiple memory states in organic ferroelectric field-effect transistors

Kam, Benjamin; Li, Xiaoran; Cristoferi, Claudio; Smits, Edsger C. P.; Mityashin, Alexander; Schols, Sarah; Genoe, Jan; Gelinck, Gerwin; Heremans, Paul

期刊名称Applied Physics Letters
作者Kam, Benjamin; Li, Xiaoran; Cristoferi, Claudio; Smits, Edsger C. P.; Mityashin, Alexander; Schols, Sarah; Genoe, Jan; Gelinck, Gerwin; Heremans, Paul
卷第101卷
期第3期
印刷ISSN0003-6951
文件大小731.20KB
发表时间2012
DOI10.1063/1.4737176

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Origin of multiple memory states in organic ferroelectric field-effect transistors