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Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi
  • 卷第51卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小183.20KB
  • 发表时间2012-11-20
  • DOI10.1143/jjap.51.11pb02
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