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Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of <i>a</i> -GaN Films Grown on <i>r</i> -Plane Sapphire Substrates by MOCVD

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -GaN Films Grown on r -Plane Sapphire Substrates by MOCVD

Tian, Yu; Dai, Jiang-Nan; Xiong, Hui; Zheng, Guang; Ryu, My; Fang, Yan-Yan; Chen, Chang-Qing
  • 期刊名称Chinese Physics Letters
  • 作者Tian, Yu; Dai, Jiang-Nan; Xiong, Hui; Zheng, Guang; Ryu, My; Fang, Yan-Yan; Chen, Chang-Qing
  • 卷第29卷
  • 期第8期
  • 印刷ISSN0256-307X
  • 电子ISSN1741-3540
  • 文件大小446.11KB
  • 发表时间2012-08
  • DOI10.1088/0256-307X/29/8/088101
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