Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region
- 期刊名称Japanese Journal of Applied Physics
- 作者Mohammadi, Saeed; Afzali-Kusha, Ali; Mohammadi, Saeed
- 卷第51卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小203.60KB
- 发表时间2012-9-14
- DOI10.1143/JJAP.51.101201
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