Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition
Y. Kawamura; M. Tani; N. Hattori; N. Miyatake; M. Horita; Y. Ishikawa; Y. Uraoka
- 作者Y. Kawamura; M. Tani; N. Hattori; N. Miyatake; M. Horita; Y. Ishikawa; Y. Uraoka
- 文件大小591.40KB
- 发表时间2012
- DOI10.1143/JJAP.51.02BF04