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Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Nakano, Yoshitaka; Irokawa, Yoshihiro; Sumida, Yasunobu; Yagi, Shuichi; Kawai, Hiroji
  • 期刊名称Journal of Applied Physics
  • 作者Nakano, Yoshitaka; Irokawa, Yoshihiro; Sumida, Yasunobu; Yagi, Shuichi; Kawai, Hiroji
  • 卷第112卷
  • 期第10期
  • 印刷ISSN0021-8979
  • 电子ISSN1089-7550
  • 文件大小1192.50KB
  • 发表时间2012-11-15
  • DOI10.1063/1.4767367
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