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The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si
<sub/>0.7</sub>
Ge
<sub/>0.3</sub>
films by rapid thermal chemical vapor deposition

The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si _0.7 Ge _0.3 films by rapid thermal chemical vapor deposition

Li, Jiun-Yun; Huang, Chiao-Ti; Sturm, James C.

期刊名称Applied Physics Letters
作者Li, Jiun-Yun; Huang, Chiao-Ti; Sturm, James C.
卷第101卷
期第14期
印刷ISSN0003-6951
电子ISSN1077-3118
文件大小626.22KB
发表时间2012-10
DOI10.1063/1.4757123

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