Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure
- 作者H. M. Tawancy
- 卷第47卷
- 期第1期
- 印刷ISSN0022-2461
- 电子ISSN1573-4803
- 文件大小728.59KB
- 发表时间2012-01
- DOI10.1007/s10853-011-5728-9
- 页码93-99
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