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III-Nitride PhotonicsTansu, Nelson; Zhao, Hongping; Liu, Guangyu; Li, Xiao-Hang; Zhang, Jing; Tong, Hua; Ee, Yik-Khoon · IEEE Photonics Journal · 2010
Investigation of fast and slow decays in InGaN/GaN quantum wellsSun, Guan; Xu, Guibao; Ding, Yujie J.; Zhao, Hongping; Liu, Guangyu; Zhang, Jing; Tansu, Nelson · 2011
Analysis of InGaN-delta-InN quantum wells for light-emitting diodesZhao, Hongping; Liu, Guangyu; Tansu, Nelson · 2010
Investigation of large Stark shifts in InGaN/GaN multiple quantum wellsXu, Guibao; Sun, Guan; Ding, Yujie J.; Zhao, Hongping; Liu, Guangyu; Zhang, Jing; Tansu, Nelson · Journal of Applied Physics · 2013
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodesHongping Zhao; Guangyu Liu; Ronald A. Arif; Nelson Tansu · 2010
Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasersZhao, Hongping; Arif, Ronald A.; Tansu, Nelson · Journal of Applied Physics · 2008
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithographyGuangyu Liu; Hongping Zhao; Jing Zhang; Joo Hyung Park; Luke J Mawst; Nelson Tansu · 2011
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013