Mott Insulators Induced by Carrier Doping
- 期刊名称Physical Review Letters
- 作者Watanabe, Hiroshi; Shirakawa, Tomonori; Yunoki, Seiji
- 卷第110卷
- 期第2期
- 印刷ISSN0031-9007
- 电子ISSN1079-7114
- 文件大小306.85KB
- 发表时间2013-1-9
- DOI10.1103/PhysRevLett.110.027002
Bioinspired Structured SurfacesBhushan, Bharat · Langmuir · 2012
Supported Lipopolysaccharide BilayersKaufmann, Stefan; Ilg, Karin; Mashaghi, Alireza; Textor, Marcus; Priem, Bernard; Aebi, Markus; Reimhult, Erik · Langmuir · 2012
Reduced Protein Adsorption by OsmolytesEvers, Florian; Steitz, Roland; Tolan, Metin; Czeslik, Claus · Langmuir · 2011
Water harvest via dewingLee, Anna; Moon, Myoung-Woon; Lim, Hyuneui; Kim, Wan-Doo; Kim, Ho-Young · Langmuir · 2012
Trapping Silicon Surface-Based RadicalsWang, Dong; Buriak, Jillian M. · Langmuir · 2006
Contact Angle Hysteresis ExplainedGao, Lichao; McCarthy, Thomas J. · Langmuir · 2006
Recovery of Nanoparticles Made EasyMyakonkaya, Olesya; Guibert, Clément; Eastoe, Julian; Grillo, Isabelle · Langmuir · 2010
Surface chemistry of zirconia polymorphsHertl, William · Langmuir · 1989