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Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

Matulionis, Arvydas

期刊名称Semiconductor Science and Technology
作者Matulionis, Arvydas
卷第28卷
期第7期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小1125.20KB
发表时间2013-07-01
DOI10.1088/0268-1242/28/7/074007

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