Effect of rf power on the structural properties of indium tin oxide thin film prepared for application in hydrogen gas sensor

• 作者V. VasanthiPillay, K. Vijayalakshmi
• 卷第24卷
• 期第6期
• 文件大小338.28KB
• 发表时间2013-06
• DOI10.1007/s10854-012-1031-z
• 页码1895-1899