A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature
Mehrad, Mahsa; Orouji, Ali A.
- 期刊名称Materials Science in Semiconductor Processing
- 作者Mehrad, Mahsa; Orouji, Ali A.
- 卷第16卷
- 期第6期
- 印刷ISSN1369-8001
- 文件大小723.21KB
- 发表时间2013-12
- DOI10.1016/j.mssp.2013.07.012
- 页码1977-1981