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[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Data retention time of a new composed cell for dynamic random access memory

[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Data retention time of a new composed cell for dynamic random access memory

Riho, Yoshiro; Nakazato, Kazuo

作者Riho, Yoshiro; Nakazato, Kazuo
文件大小1352.41KB
发表时间2013
DOI10.1109/EDSSC.2013.6628104
页码1-2

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