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Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Aktakka, Ethem Erkan; Ghafouri, Niloufar; Smith, Casey E.; Peterson, Rebecca L.; Hussain, Muhammad Mustafa; Najafi, Khalil
  • 期刊名称IEEE Electron Device Letters
  • 作者Aktakka, Ethem Erkan; Ghafouri, Niloufar; Smith, Casey E.; Peterson, Rebecca L.; Hussain, Muhammad Mustafa; Najafi, Khalil
  • 卷第34卷
  • 期第10期
  • 印刷ISSN0741-3106
  • 电子ISSN1558-0563
  • 文件大小976.83KB
  • 发表时间2013-10
  • DOI10.1109/LED.2013.2277693
  • 页码1334-1336
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