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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Nakai, Eiji; Ishizaka, Fumiya; Fukui, Takashi
  • 作者Tomioka, Katsuhiro; Yoshimura, Masatoshi; Nakai, Eiji; Ishizaka, Fumiya; Fukui, Takashi
  • 文件大小3021.93KB
  • 发表时间2013
  • DOI10.1109/iedm.2013.6724557
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